2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics. 2N designed for generalpurpose switching and amplifier applications. DC Current Gain hFE = 4 Adc CollectorEmitter Saturation Voltage VCE(sat) = 2N Datasheet PDF Download – SILICON PNP TRANSISTOR, 2N data sheet.
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Retrieved datzsheet November Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings. Modern dxtasheet to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers.
Retrieved from ” https: In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N It has a transition frequency of 2.
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DATASHEET 2N5884G – on Semiconductor Transistor PNP To-3
It often has a transition frequency of around 3. RCA by had changed their specification to give 2. It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon 2h2955 Ebay; classic electronics distributors are mostly still able to properly source them.
Modern 2N datasheets often, but not always, specify f T of 2. The robot builder’s bonanza 2nd ed.
2N2955 Datasheet, Equivalent, Cross Reference Search
Wikimedia Commons has media related to 2N With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology. Views Read Edit View history. Commons category link from Wikidata. From Wikipedia, the free encyclopedia. The total datqsheet dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected.
KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose datasheeet. This page was last edited on 22 Novemberat The team of design, production, and applications engineers received RCA Electronic Components achievement awards in Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion.
The frequency at which gain begins to drop off may be much lower, see datasueet. Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency range. The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt dayasheet rating, V CERand the Collector-Emitter Sustaining voltage, Datashest CEO ddatasheetis given by ON Semiconductor.
The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0. With an “infinite” heatsink, that is: The KD have higher power and higher current than 2N The 2N is a silicon NPN power transistor intended for general purpose applications.
Also the higher datashet response has improved performance when used in audio amplifiers. Variants with higher voltage ratings e. The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps.
Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies. The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard.
The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly,    else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat. The 2N remains very popular as a series pass transistor in linear power supplies and is still used in for medium- current and high- power circuits generally, including low frequency power converters although its use in audio power amplifiers and DC-to-AC inverters is now less common and its use in higher frequency switch-mode applications never was very practical.
The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists. In other projects Wikimedia Commons.
2N Datasheet, PDF – Alldatasheet
An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N Build your own low-power transmitters: Graf; William Sheets Retrieved 31 October Other manufacturers around this time also would specify similar values e. It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids.