2N DC Current Gain. *hFE. IC=mA, VCE=10V. 30 – IC=10mA, VCE= . It is recommended that you completely review our Data Sheet(s) so as to. 2N datasheet, 2N circuit, 2N data sheet: MICRO-ELECTRONICS – NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES,alldatasheet. 2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics.

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2N Datasheet, Equivalent, Cross Reference Search. Transistor Catalog

An emitter layer in the base layer is of thickness about six-tenths the thickness of the base layer. An automatic avalanche transistor burn-in tester allows power burn-in of up to transistors at a time.

Note – I have not bought from this source. Stability on all types has been improved by power burn-in. Data runs were typically 3 to 4 months long, with readings taken weekly. Also contains many other topics of interest http: Using a Tektronix curve tracer on the V range, I selected all transistors that had the highest breakdown voltage. A Documentary History of Fairchild Semiconductor.

Older diffused-junction types sometimes do. Unfortunately, like all earlier transistors, the edge of the collector-base junction was exposed, making it sensitive to leakage through surface contaminants, thus requiring hermetic seals or passivation to prevent degradation of the transistor’s characteristics over time.


The Zetexes are made in Russia, presumably on an old fab line. For a pockels driver requiring something in the order of a 3.

2N3020 Datasheet PDF

Data are collected from each run and stored. Teruya Avalanche transistor selection for long-term datqsheet in streak camera sweep and pulser applications, 5 September R – T R ansistor selection criteria for avalanche.

Transistor selection – best transistor types for avalanche. Vcbo being close to Vceo’ http: Fast and RF transistors tend to work as well. Asian sources of cheap Zetex avalanche transistors pedigree unknown.

Vcbo close to Vceo Pinout best suited for low C, L Appendix B – Subnanosecond rise time pulse generators for the rich and poor. Woolston This excellent paper explores multiple Q-switch design topologies.

Vcbo as high as possible fewer devices: High current handling 5. Potential source of low cost ZTX avalanche transistors: The electric field causes migration of material in the high field region at the surface near the collector-base junction, creating the voltage instability.

Note – final choice is usually determined from characterisation tests and burn-in. As with the authors of most papers, I have gone the route of selecting ordinary low cost transistors. I datasheeet the breakdown voltage with the aid of a Tektronix curve tracer, see bottom of this page for further details. Motorola, Zetex and National transistors were operated at microamperes pA [sic], and the Raytheon units were operated at 20 pA. I intend to run more tests and measurements based on this paper.


Selection of avalanche transistors for the LHC Project. However transistors were avalanched long before this, as earlier papers below reveal. Makers of the Microchip: Of the three transistors selected in paper A7, only the 2N is readily available in I found paper [A22] only after writing all of this up.

Datasjeet at least MHz 7. Williams, 9 October A base layer in the surface of the epitaxial layer is of thickness about one-fourth the thickness of the epitaxial layer. Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September http: Kuthi, USA Sept All papers referencing this transistor typically originated from his research.

I assume the reason for suggesting older devices are better, into which I read: Larkin, Highland Technology Inc. TO is aka SOT54; manufacturer known only where stated abbreviations: Datashset Vol 64, No.