2N3020 DATASHEET PDF

2N DC Current Gain. *hFE. IC=mA, VCE=10V. 30 – IC=10mA, VCE= . It is recommended that you completely review our Data Sheet(s) so as to. 2N datasheet, 2N circuit, 2N data sheet: MICRO-ELECTRONICS – NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES,alldatasheet. 2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics.

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2N Datasheet, Equivalent, Cross Reference Search. Transistor Catalog

An emitter layer in the base layer is of thickness about six-tenths the thickness of the base layer. An automatic avalanche transistor burn-in tester allows power burn-in of up to transistors at a time.

Note – I have not bought from this source. Stability on all types has been improved by power burn-in. Data runs were typically 3 to 4 months long, with readings taken weekly. Also contains many other topics of interest http: Using a Tektronix curve tracer on the V range, I selected all transistors that had the highest breakdown voltage. A Documentary History of Fairchild Semiconductor.

Older diffused-junction types sometimes do. Unfortunately, like all earlier transistors, the edge of the collector-base junction was exposed, making it sensitive to leakage through surface contaminants, thus requiring hermetic seals or passivation to prevent degradation of the transistor’s characteristics over time.

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The Zetexes are made in Russia, presumably on an old fab line. For a pockels driver requiring something in the order of a 3.

2N3020 Datasheet PDF

Data are collected from each run and stored. Teruya Avalanche transistor selection for long-term datqsheet in streak camera sweep and pulser applications, 5 September R – T R ansistor selection criteria for avalanche.

Transistor selection – best transistor types for avalanche. Vcbo being close to Vceo’ http: Fast and RF transistors tend to work as well. Asian sources of cheap Zetex avalanche transistors pedigree unknown.

Vcbo close to Vceo Pinout best suited for low C, L Appendix B – Subnanosecond rise time pulse generators for the rich and poor. Woolston This excellent paper explores multiple Q-switch design topologies.

Vcbo as high as possible fewer devices: High current handling 5. Potential source of low cost ZTX avalanche transistors: The electric field causes migration of material in the high field region at the surface near the collector-base junction, creating the voltage instability.

Note – final choice is usually determined from characterisation tests and burn-in. As with the authors of most papers, I have gone the route of selecting ordinary low cost transistors. I datasheeet the breakdown voltage with the aid of a Tektronix curve tracer, see bottom of this page for further details. Motorola, Zetex and National transistors were operated at microamperes pA [sic], and the Raytheon units were operated at 20 pA. I intend to run more tests and measurements based on this paper.

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Selection of avalanche transistors for the LHC Project. However transistors were avalanched long before this, as earlier papers below reveal. Makers of the Microchip: Of the three transistors selected in paper A7, only the 2N is readily available in I found paper [A22] only after writing all of this up.

Datasjeet at least MHz 7. Williams, 9 October A base layer in the surface of the epitaxial layer is of thickness about one-fourth the thickness of the epitaxial layer. Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September http: Kuthi, USA Sept All papers referencing this transistor typically originated from his research.

I assume the reason for suggesting older devices are better, into which I read: Larkin, Highland Technology Inc. TO is aka SOT54; manufacturer known only where stated abbreviations: Datashset Vol 64, No.