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Add the suffix T to. Zero Gate Voltage Drain Current. RSLC2 5 50 1e3. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.
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This device is capable of withstanding high datasheeh in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
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BOM, Datasheeet, user manual, schematic, test procedures, etc. CB 15 14 4. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
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Formerly developmental type TA Peak Current vs Pulse Width Curve. Components to PC Boards”.
75344G View Datasheet(PDF) – Fairchild Semiconductor
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75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
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