This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical. BSIM and IC simulation. Circuit simulation and compact models. BSIM – the beginning. BSIM3 – a compact model based on new MOSFET physics. : BSIM4 and MOSFET Modeling for IC Simulation (International Series on Advanced in Solid State Electronics and Technology).

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Gate intrinsic-input resistance for non-quasi-static modeling. Source and drain contact scenarios and diffusion resistances. Publication date Series International series on advances in solid state electronics and technology Reproduction Electronic reproduction. Review of the charge-deficit transient NQS model. Intrinsic charge and capacitance models.

It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. BSIM4 channel thermal noise models. Saturation junction leakage current and zero-bias capacitance models.


Source and drain area and perimeter calculation. BSIM4 diode charge and capacitance [4]. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulxtion model. Introduction and sjmulation objectives. Series International series on advances in solid state electronics and technology. SearchWorks Catalog Iic Libraries.

Nielsen Book Data Skip to search Skip to main content. World Scientific Publishing Co. Physical description xix, p.

BSIM4 and MOSFET Modeling For IC Simulation

Gate direct-tunneling current theory and model. Output resistance in saturation region. World Scientific Full view.

Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.

Time discretization, equation linearization and matrix stamping. Channel DC current and output resistance.


Bibliography Includes bibliographical references and index. Source and drain of a transistor with multiple gate fingers. Physical mechanisms of diode DC currents. Noise representations and parameters. Imprint Singapore ; Hackensack, N. Diode temperature-dependence model [4]. Composite stamps for transient NQS model.

BSIM – the beginning. Non-quasi-static and parasitic gate and body resistances. Find it at other libraries via WorldCat Limited preview. Single continuous channel charge model. Connections of a multi-transistor stack. Channel current in subthreshold and linear operations.

Gate direct-tunneling and body currents. The intent of this book ch.

BSIM4 and MOSFET modeling for IC simulation – CERN Document Server

BSIM4 flicker noise models. Fringing and overlap capacitances. Charge and capacitance models. Describe the connection issue. Gate and channel geometries and materials. Source and drain parasitics: