This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical. BSIM and IC simulation. Circuit simulation and compact models. BSIM – the beginning. BSIM3 – a compact model based on new MOSFET physics. : BSIM4 and MOSFET Modeling for IC Simulation (International Series on Advanced in Solid State Electronics and Technology).

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Intrinsic charge and capacitance models. Responsibility Weidong Liu, Chenming Hu.

Physical description xix, p. Diode temperature-dependence model [4]. Channel current in subthreshold and linear operations. BSIM4 diode charge and capacitance [4]. Charge and capacitance models. BSIM4 channel thermal noise models. Saturation junction leakage modelung and zero-bias capacitance models.

The intent of this book ch. Publication date Series International series on advances in solid state electronics and technology Reproduction Electronic reproduction. Gate direct-tunneling ,osfet body currents. Physical mechanisms of diode DC currents. BSIM – the beginning. Source and drain contact scenarios and diffusion resistances.


SearchWorks Catalog Stanford Libraries. Skip to search Skip to main content. Composite stamps for transient NQS model. Source and drain of a transistor with multiple gate fingers.

BSIM4 and MOSFET Modeling For IC Simulation – Semantic Scholar

Connections of a multi-transistor stack. Noise representations and parameters. Channel DC current and output resistance. BSIM4 flicker noise models. Source and drain area and perimeter calculation.

SearchWorks Catalog

BSIM4 – aimed for nm down to 20nm nodes. Single continuous channel charge model. Series International series on advances in solid state electronics and technology. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Gate intrinsic-input resistance for non-quasi-static modeling.

Bibliography Includes bibliographical references and index. Gate and channel geometries and materials. Fringing and overlap capacitances. Describe the connection issue.

The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model.


World Scientific Publishing Co.

Non-quasi-static and parasitic gate and body resistances. Available to subscribing institutions. ISBN electronic bk.

Source and drain parasitics: Imprint Singapore ; Hackensack, N. Find it at other libraries via WorldCat Limited preview. Output resistance in saturation region. Junction diode IV and CV models.

World Scientific Full view. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the mksfet of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.